Nanofabrication of Unijunction Transistors
based on Metallophthalucyanines
K.O. Park
K.O. Park
This is an abstract
for a poster to be presented at the
Fifth
Foresight Conference on Molecular Nanotechnology.
The full paper is available here.
In the previous thought experiment, the electrical
conductivity of N-channel Depletion-Type MOSFET's with metal
containing phthalocyanine LB (Langmuir-Blodgett) films was
presented. In this thought experiment, the electrical
conductivity modulation of unijunction transistors (UJT) based on
metallophthalocyanines, such as CuPc, PbPc, and Cu(PcF8)/NiPc,
which are deposited onto P+ region of a Si-substrate is
described. The three different kinds of unijunction transistors
could be fabricated using an imprint nanolithography and a
sublimed method along with a conventional microelectronic
fabrication technique. They are called MPc unijunction
transistors, denoted by MPc UJT (M=Pb, Cu) and by Cu(PcF8)/NiPc
UJT, where Cu(PcF8)/NiPc is a bilayer to be deposited onto P+
region of a Si substrate. A switching voltage of Cu (PcF8)NiPc
unijunction transistor (UJT) to be fabricated from this
experiment could be larger than that of a conventional
unijunction transistor due to large forward diode drop (about 2V
or more) from a bilayer of Cu(PcF8)NiPc of the P+ region in
Cu(PcF8)/NiPc UJT.
It is also expected that the switching voltages of CuPc UJT
and PbPc UJT to be fabricated by doping with NO2 would
be smaller than those of CuPc UJT and PbPc UJT to be fabricated
by doping with O2. The switching time of the
fabricated UJT from this work would be smaller than that of a
conventional UJT adjusting the length from the P+ region to the
source.
A unijunction transistor with a property of an S-shaped curve
(Input vs. Output), which would be useful for neural network,
could also be fabricated from this experiment.
*Corresponding Address:
K.O. Park Ph.D., All Rights Reserved.
For comments please contact counsel@qni.com
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