Foresight Nanotech Institute Logo
Image of nano


Electrical Properties of Boron Nanowires

J.G. Lu*, 1, D.W. Wang1, C.J. Otten2, and W.E. Buhro2

1Dept. of Materials Science, University of California at Irvine, CA 92697 USA
2Dept of Chemistry, Washington University, MO 63130

This is an abstract for a presentation given at the
11th Foresight Conference on Molecular Nanotechnology

 

Within the last few years, much effort has been focused on the construction of nanoscale electronic devices incorporating nanotubes, nanowires or their crossed junctions. These include field effect transistor and single electron transistors, p-n diodes, Schottky-barrier rectifiers, and logic gates. Our work is on the study of the electrical property and the device applications of boron nanowires. Crystalline boron nanowires have been synthesized using catalyst chemical vapor deposition method. Different metals, Ti and Ni, have been used as contact electrodes to the nanowires for electrical transport study. Ni was found to be a good choice in making ohmic contact to the nanowire. Three-terminal electrical measurements illustrate p-type conduction of boron nanowires. At 4.2 K, their I-V response showed very low conductance at low bias, and beyond certain threshold, the current increases exponentially. We attribute this behavior to electrical field induced impact ionization.

Abstract in Microsoft Word® format 20,294 bytes


*Corresponding Address:
J.G. Lu
Dept. of Materials Science, University of California at Irvine
Engineering Tower 644J
Irvine CA 92697 USA
Phone: 9498248714 Fax: 9498242541
Email: jglu@uci.edu



Donate Now

 

Foresight Programs

Join Now

 

Home About Foresight Blog News & Events Roadmap About Nanotechnology Resources Facebook Contact Privacy Policy

Foresight materials on the Web are ©1986–2014 Foresight Institute. All rights reserved. Legal Notices.

Web site development by Netconcepts. Email marketing by gravityMail. Maintained by James B. Lewis Enterprises.