Ultra fast, ultra low energy transistors in Electronic and Optical Nanosystems
Dr. Reza Arghavani is the Managing Director of Technology for LAM Research Corporation. He will be speaking on the realization of nanotechnology approaching the atomic scale that underpins the ultra fast, ultra low energy transistors of the 22nm node devices on sale today and the challenges for creating the even more demanding, smaller, faster and lower power devices of the future as we approach the limits of design.
Prior to Lam Research, Dr. Arghavani was the CTO and Co-Founder of Universal Phase, Inc., and was responsible for the realization of a transistor based apparatus to deliver focused microwave energy into a cavity for Energy and SEMI industrial applications. As a Fellow at Applied Materials [one of only three at AMAT], Dr. Arghavani led a team to create a series of stress inducing dielectrics, which are currently in use in high volume manufacturing for both Logic and Non-Volatile Memory applications. This program led to over $800 million revenue in a period of two years.
At Intel Corporation Logic Technology Development, Dr. Arghavani was responsible for three generations of high performance microprocessor gate stack technology. Dr. Arghavani introduced the first High K Atomic Layer Deposition (ALD) into Intel development FABs. This work eventually led to the introduction of High-K / Metal Gates into 45nm INTEL Microprocessors [débuted by Gordon Moore as the biggest change in transistor technology since the late 1960s]. He was also part of the original Intel development team that invented and patented the 3-D Tri-Gate transistor, now in high volume manufacturing for the 22nm node.
2014 Foresight Technical Conference: Integration —February 7-9, 2014
Early registration rates and reduced hotel rates are available for a limited time.
Use Promo Code NANOBLOG for $100 off registration.
