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Design and Study of
Carbon Nanotube Electronic Devices

J. Han*, M.P. Anantram, and R. Jaffe

NASA Ames Research Center

This is an abstract for a talk to be given at the
Fifth Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.


Carbon nanotubes (CNT) can be metals or semiconductors, just depending on their diameter and helicity. We design a variety of two and three terminal junctions of metals and/or semiconductors by introducing topological defects into interface where the different tubes are joined.

We study energetics of these devices via quantum chemistry calculations. We derive topological and chemical rules to identify or design a variety of CNT devices. Some of our model heterojunctions have been observed from more recent CNTs grown by chemical vapor deposition experiments. We apply molecular dynamics simulations to study the thermal and mechnical stability of these devices.

We use quantum mechanics calculations to investigate electronic structures and properties of some CNT devices that have been proved to be energetically stable and chemically accessible. We calculate the density of state (DOS) and conducdence as functions of interface composition and geometry. Based on our systymatic studies of chemical, thermal, mechanical and electronic properties, we discuss the fabrication and applications of the CNT electronic devices as transistors, resonant tunneling diodes, electro-mechanical devices and chemical-electrical-mechanical devices.

*Corresponding Address:
Dr. Jie Han, NASA Ames Research Center, Moffett Field, CA 94035, ph: 415-604-4799 fax: 415-604-3957 email:


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