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Atomically-resolved surface photovoltage imaging around single adsorbed atoms at semiconductor surfaces

G. Haase*, S. Aloni, D. Gorelik, and I. Nevo

Dept. of Chemical Physics, The Weizmann Institute of Science
Rehovot, 76100 Israel.

This is an abstract for a presentation given at the
Seventh Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.


Atomically-resolved, local surface photovoltage imaging through scanning tunneling microscopy (STM) was used to determine the energy, occupancy, and precise location of surface states created by single alkali metal adatoms and single missing atom defects on GaAs(110) and Si(100)2x1 surfaces. We took advantage of the fact that the electric field produced by the STM tip penetrates the surface except where there is a local Fermi-level pinning: It turns out that a single two-electron surface state can screen the tip-induced electric field very efficiently and pin the Fermi level within a sub-nanometer radius.

  • D. Gorelik, S. Aloni, & G. Haase, Surf. Sci. 432, pages 265-278 (1999). Local Fermi level pinning at a single adatom (Cs) or vacancy (As) on a GaAs(110) surface
  • S. Aloni, I. Nevo & G. Haase, Phys. Rev. B. 60, pages 2165-2168 (1999). Single Cs adatoms at Si(001)2x1 surfaces: A local surface photovoltage imaging study.

*Corresponding Address:
Gaddi Haase
Dept. of Chemical Physics, The Weizmann Institute of Science
Rehovot, 76100 Israel
Phone: +972-8-9342073, fax: +972-8-9344123


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