A field-effect tunneling transistor comprising a vertical heterostructure of atomically thin layers of graphene and boron nitride or molybdenum disulfide may pave the way for computer chips based on graphene nanotechnology.
Graphene heterostructures may lead to graphene-based computer chips
![](https://foresight.org/wp-content/uploads/2022/11/VerticalTransistor_small2012-1.jpg)