Nanowire Engineered Transistor and Memory Arrays
Jie Han*, M. Meyyappan, Wendy Fan, Hou Tee Ng, and Bin Yu
NASA Ames Research Center,
Moffett Field, CA 94035 USA
This is an abstract
for a presentation given at the
11th
Foresight Conference on Molecular Nanotechnology
We have designed and synthesized nanowires including solid state single crystal nanowires such as Si, ZnO, In2O3 and SnO2 and organic molecular wires such as conjugated molecules and terpyridine metal complexes, specific for hierarchical nanoelectronic devices applications. Approaches have been developed to address vertically ordered self-assembly structures, in-situ doping, interface and interconnect. The designed molecule wires show the controlled and reproducible negative differential resistance, switch and memory effects. The retention time in memory applications has been longer than one month, the best among all reported organic molecule wires, promising truly non-volatile molecular memory applications. The vertically aligned solid state nanowires were fabricated into surrounding gate transistors, diodes, capacitors and memory arrays, showing expected device performances at nanoscale. Hierarchical devices of molecular and solid state nanowires were also exploited to address interconnect and integration issues at wafer scale.
Note: part of work in molecular wire devices is in collaboration with Prof. Chongwu Zhou at University of Southern California
*Corresponding Address:
Jie Han
NASA Ames Research Center
MS 229-3
Moffett Field, CA 94035 USA
Phone: 650 604 4999 Fax: 650 604 5244
Email: [email protected]
Web: http://www.ipt.arc.nasa.gov
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