Posted by Ben Harper: ScienceDaily is pointing out here that scientists at UIUC’s Micro and Nanotechnology lab have fabricated an indium phosphide and indium gallium arsenide transistor which can switch at 604 GHz. Thats 200x the clock speed of relatively state of the art silicon microprocessors running at 3 GHz. However its likely that given it is a bipolar transistor rather than a CMOS transistor that its going to require the Henson/Drexler heterodensity or phase change coolant systems if one intends to build microprocessors with millions of these transistors without having them melt.
The scientists believe the technology can be pushed to produce THz transistors.
