Single-electron transistor at IEDM

from the they-know-how-to-make-the-little-things-count dept.
GinaMiller pointed out an EE Times article on the upcoming International Electron Devices Meeting, Dec. 11-13 in San Francisco. "A team from Japan's NTT research laboratories has gone beyond the realm of single-transistor devices to build the first elemental circuit using single-electron transistors. The team fabricated the circuit using a silicon-on-insulator (SOI) process and a vertical pattern-dependent oxidation technique. When operating at 25 K, the circuit performed basic arithmetic calculations."